Polyaniline/gallium doped ZnO heterostructure device via plasma enhanced polymerization technique: Preparation, characterization and electrical properties

被引：35

作者：

Ameen, Sadia ^{[1
]}

Akhtar, M. Shaheer ^{[2
,3
]}

Kim, Young Soon ^{[1
]}

Yang, O-Bong ^{[2
]}

Shin, Hyung-Shik ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Solar Energy Res Ctr, Sch Chem Engn, Energy Mat & Surface Sci Lab, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, New & Renewable Energy Mat Dev Ctr NewREC, Jeonju, South Korea

来源：

MICROCHIMICA ACTA | 2011年 / 172卷 / 3-4期

关键词：

ZnO; Polyaniline; Doping; Heterostructure; Electrical properties; FABRICATION; GROWTH; NANOWIRES; ARRAYS;

D O I：

10.1007/s00604-010-0507-x

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The ZnO and gallium-doped ZnO nanoparticles (NPs) were synthesized by simple chemical method and used for the fabrication of p-polyaniline/n-ZnO heterostructures devices in which polyaniline was deposited by plasma-enhanced polymerization. The increment in the crystallite sizes of gallium doped ZnO nanoparticles from similar to 21.85 nm to similar to 32.39 nm indicated the incorporation of gallium ion into the ZnO nanoparticles. The surface and structural studies investigated the participation of protonated N atom for the bond formation between polyaniline and gallium-ZnO through partial hydrogen bonding. Compared to a Pt/polyaniline/ZnO diode, the fabricated Pt/polyaniline/gallium-ZnO heterostructure diode exhibited good rectifying behavior with Current-Voltage characteristics of improved saturation current, low ideality factor, and a high barrier height might due to the efficient charge conduction via gallium ion at the junction of the polyaniline/gallium doped-ZnO interface.

引用

页码：471 / 478

页数：8

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