Near-zero IR transmission in the metal-insulator transition of VO2 thin films

被引：78

作者：

Balu, R. ^{[1
]}

Ashrit, P. V. ^{[1
]}

机构：

[1] Univ Moncton, Dept Phys & Astron, Thin Film & Photon Res Grp, Moncton, NB E1A 3E9, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

关键词：

D O I：

10.1063/1.2834367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vanadium dioxide films have been prepared with different thicknesses using radio-frequency magnetron sputtering technique followed by postdeposition annealing in oxygen ambient. Films with a thickness of 300 nm show a switching efficiency of similar to 74% and most importantly with a near-zero infrared transmission in the switched state. As the film thickness decreases, the inherent transmission in the switched state increases along with reduced switching efficiencies. (c) 2008 American Institute of Physics.

引用

页数：3

共 14 条

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