15.4%-efficient and 25 μm-thin crystalline Si solar cell from layer transfer using porous silicon

被引:21
作者
Brendel, R [1 ]
Feldrapp, K [1 ]
Horbelt, R [1 ]
Auer, R [1 ]
机构
[1] ZAE Bayern, Bavarian Ctr Appl Energy Res, D-91058 Erlangen, Germany
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 197卷 / 02期
关键词
D O I
10.1002/pssa.200306552
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A monocrystalline silicon wafer with a porous Si surface is an ideal seed for the epitaxial growth of thin monocrystalline Si films. After growth, we process a solar cell into the epitaxial film without using costly photolithography. We glue the cell to a glass carrier and separate it from the growth substrate at the porous Si layer. The substrate wafer is re-usable. We achieve an independently confirmed power conversion efficiency of 15.4% with a 25.5 mum-thick cell (3.88 cm(2)) using layer transfer with porous Si.
引用
收藏
页码:497 / 501
页数:5
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