Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing

被引：9

作者：

Krafft, B ^{[1
]}

Förster, A ^{[1
]}

van der Hart, A ^{[1
]}

Schäpers, T ^{[1
]}

机构：

[1] Forschungszentrum Julich GmbH, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 9卷 / 04期

关键词：

Aharonov-Bohm effect; two-dimensional electron gas; transport measurements;

D O I：

10.1016/S1386-9477(00)00287-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The control of the Aharonov-Bohm effect on a AlGaAs/GaAs ring structure is studied by employing two in-plane-gates. By applying a gate voltage to one of the gates, a change of the oscillation pattern due to the additional potential induced in one branch of the ring is observed. The change of the oscillation frequency as well as the phase is attributed to the multi-channel transport. In case of a symmetric biasing, where both gates are biased simultaneously, a larger voltage is required to change the oscillation pattern than for the case when only one gate is used, This effect is explained by a partial compensation of the phase difference between both branches of the ring. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：635 / 641

页数：7

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