Using porous silicon as semi-insulating substrate for β-SiC high temperature optical-sensing devices

This work demonstrates the availability of using porous silicon as semi-insulating substrate for beta -SiC high temperature optical sensing devices. A h ISM structure was fabricated both on porous silicon substrate and conventional silicon substrate, respectively. Experimental results show the optical current ratio can he improved up to 400% at room temperature and 3000% at 200 degreesC operating temperature, respectively, with the porous silicon substrate.