Comment on "exchange instabilities in semiconductor double-quantum-well systems"

被引：11

作者：

Reboredo, FA ^{[1
]}

Proetto, CR ^{[1
]}

机构：

[1] Ctr Atom Bariloche, Comis Nacl Energia Atom, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.58.7450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconductor double-quantum-well systems in the low-density regime are prone to magnetic and charge-transfer instabilities. While recent calculations, using both a pseudospin approach and a local-spin-density approximation (LSDA) [Phys. Rev. B 55, 4506 (1997)] seem to rule out the instability towards a monolayer configuration, the present contribution is devoted to refuting this conclusion in the LSDA. In this approximation, it is found that then is a charge-transfer instability for barrier widths that are neither too small nor too large.

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收藏

页码：7450 / 7452

页数：3

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