Potential sputtering

被引:147
作者
Aumayr, F [1 ]
Winter, H [1 ]
机构
[1] Vienna Tech Univ, Inst Allgemeine Phys, A-1040 Vienna, Austria
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2004年 / 362卷 / 1814期
关键词
multi-charged-ion-surface interaction; potential sputtering; hollow atoms; nanostructuring;
D O I
10.1098/rsta.2003.1300
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The potential energy stored in multiply charged ions is liberated when the ions recombine during impact on a solid surface. For certain target species this can lead to a novel form of ion-induced sputtering, which, in analogy to the usual kinetic sputtering, has been termed 'potential sputtering'. This sputtering process is characterized by a strong dependence of the observed sputtering yields on the charge state of the impinging ion and can take place at ion-impact energies well below the kinetic sputtering threshold. We summarize a series of recent careful experiments in which potential sputtering has been investigated for hyperthermal highly charged ions' impact on various surfaces (e.g. Au, LiF, NaCl, SiO2, Al2O3 and MgO), present the different models proposed to explain the potential sputtering phenomenon and also discuss possible applications of potential sputtering for nanostructure fabrication.
引用
收藏
页码:77 / 102
页数:26
相关论文
共 69 条
[1]   NONLINEAR SCREENING EFFECTS IN THE INTERACTION OF SLOW MULTICHARGED IONS WITH METAL-SURFACES [J].
ARNAU, A ;
VANEMMICHOVEN, PAZ ;
JUARISTI, JI ;
ZAREMBA, E .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 100 (2-3) :279-283
[2]  
Arnau A, 1997, SURF SCI REP, V27, P117
[3]   Electronic sputtering of thin SiO2 films by MeV heavy ions [J].
Arnoldbik, WM ;
Tomozeiu, N ;
Habraken, FHPM .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 203 :151-157
[4]   EMISSION OF ELECTRONS FROM A CLEAN GOLD SURFACE-INDUCED BY SLOW, VERY HIGHLY-CHARGED IONS AT THE IMAGE CHARGE ACCELERATION LIMIT [J].
AUMAYR, F ;
KURZ, H ;
SCHNEIDER, D ;
BRIERE, MA ;
MCDONALD, JW ;
CUNNINGHAM, CE ;
WINTER, HP .
PHYSICAL REVIEW LETTERS, 1993, 71 (12) :1943-1946
[5]  
AUMAYR F, 1999, COMMENTS AT MOL PHYS, V34, P201
[6]  
AUMAYR F, 1995, PHYS ELECT ATOMIC CO, V360, P31
[7]  
Bitenskii I. S., 1979, Soviet Physics - Technical Physics, V24, P618
[8]   EMISSION OF HYDROGEN-IONS UNDER MULTIPLY CHARGED ION-BOMBARDMENT [J].
BITENSKY, I ;
PARILIS, E ;
DELLANEGRA, S ;
LEBEYEC, Y .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 72 (3-4) :380-386
[9]  
BITENSKY IS, 1989, J PHYS PARIS C, V2, P227
[10]   Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions [J].
Borsoni, G ;
Le Roux, V ;
Laffitte, R ;
Kerdilès, S ;
Béchu, N ;
Vallier, L ;
Korwin-Pawlowski, ML ;
Vannuffel, C ;
Bertin, F ;
Vergnaud, C ;
Chabli, A ;
Wyon, C .
SOLID-STATE ELECTRONICS, 2002, 46 (11) :1855-1862