Nonlinear absorption edge properties of 1.3-μm GaInNAs saturable absorbers -: art. no. 132103

被引:16
作者
Grange, R [1 ]
Rutz, A [1 ]
Liverini, V [1 ]
Haiml, M [1 ]
Schön, S [1 ]
Keller, U [1 ]
机构
[1] ETH, Dept Phys, Inst Quantum Elect, CH-8093 Zurich, Switzerland
关键词
D O I
10.1063/1.2058216
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaInNAs 1.3-mu m quantum-well saturable absorber mirrors are characterized with spectrally resolved nonlinear reflectivity measurements over 70 nm around the broadened band edge. All important parameters such as saturation fluence F-sat, modulation depth Delta R, and nonsaturable loss Delta R-ns are obtained relative to the photoluminescence (PL) peak. F-sat has a minimum of 4 mu J/cm(2) 10 nm above the PL peak and Delta R scales with the linear absorption even in the bandtail. The product Delta R center dot F-sat important to suppress Q-switching instabilities in mode-locked lasers decreases linearly with wavelength and reaches a minimum 20 nm above the PL peak. We observed wavelength-independent nonsaturable losses of only about 10% of the maximum linear absorption. These results increase the understanding of optical and electronic properties of GaInNAs around the band edge. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 19 条
[1]   Diode-pumped passively mode-locked 1.3-mu m Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers [J].
Fluck, R ;
Zhang, G ;
Keller, U ;
Weingarten, KJ ;
Moser, M .
OPTICS LETTERS, 1996, 21 (17) :1378-1380
[2]   Eyesafe pulsed microchip laser using semiconductor saturable absorber mirrors [J].
Fluck, R ;
Haring, R ;
Paschotta, R ;
Gini, E ;
Melchior, H ;
Keller, U .
APPLIED PHYSICS LETTERS, 1998, 72 (25) :3273-3275
[3]   Antimonide semiconductor saturable absorber for 1.5μm [J].
Grange, R ;
Ostinelli, O ;
Haiml, M ;
Krainer, L ;
Spühler, GJ ;
Ebnöther, M ;
Gini, E ;
Schön, S ;
Keller, U .
ELECTRONICS LETTERS, 2004, 40 (22) :1414-1416
[4]  
Haiml M, 2004, APPL PHYS B-LASERS O, V79, P331, DOI [10.1007/s00340-004-1535-1, 10.1007/S00340-004-1535-1]
[5]   Q-switching stability limits of continuous-wave passive mode locking [J].
Hönninger, C ;
Paschotta, R ;
Morier-Genoud, F ;
Moser, M ;
Keller, U .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1999, 16 (01) :46-56
[6]   Ultrafast solid-state lasers [J].
Keller, U .
PROGRESS IN OPTICS, VOL 46, 2004, 46 :1-115
[7]   Recent developments in compact ultrafast lasers [J].
Keller, U .
NATURE, 2003, 424 (6950) :831-838
[8]   SOLID-STATE LOW-LOSS INTRACAVITY SATURABLE ABSORBER FOR ND-YLF LASERS - AN ANTIRESONANT SEMICONDUCTOR FABRY-PEROT SATURABLE ABSORBER [J].
KELLER, U ;
MILLER, DAB ;
BOYD, GD ;
CHIU, TH ;
FERGUSON, JF ;
ASOM, MT .
OPTICS LETTERS, 1992, 17 (07) :505-507
[9]  
Keller U, 1999, SEMICONDUCT SEMIMET, V59, P211
[10]   Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers [J].
Keller, U ;
Weingarten, KJ ;
Kartner, FX ;
Kopf, D ;
Braun, B ;
Jung, ID ;
Fluck, R ;
Honninger, C ;
Matuschek, N ;
derAu, JA .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :435-453