Effect of hydrogenation on the metal-semiconductor phase transition in vanadium dioxide thin films

被引:46
作者
Andreev, V. N. [1 ]
Kapralova, V. M. [2 ]
Klimov, V. A. [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, R-194021 St Petersburg, Russia
[2] St Petersburg State Univ, R-195251 St Petersburg, Russia
关键词
D O I
10.1134/S1063783407120177
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Hydropgen penetration into thin films of vanadium dioxide from aqueous solutions of mono-, di-, and tribasic alcohols is studied. It is shown that this process is reversible, has a catalytic character, and brings about a lowering, of the metal-semiconductor phase transition temperature. It is established that the phase transition in a hydrogenated HxVO2 film is completely suppressed for x > 0.04.
引用
收藏
页码:2318 / 2322
页数:5
相关论文
共 22 条
[1]   Effect of grain sizes on the metal-semiconductor phase transition in vanadium dioxide polycrystalline thin films [J].
Aliev, R. A. ;
Andreev, V. N. ;
Kapralova, V. M. ;
Klimov, V. A. ;
Sobolev, A. I. ;
Shadrin, E. B. .
PHYSICS OF THE SOLID STATE, 2006, 48 (05) :929-934
[2]   Effect of vacuum heat treatment on the metal-semiconductor phase transition in thin vanadium dioxide films [J].
Aliev, RA ;
Andreev, VN ;
Klimov, VA ;
Lebedev, VM ;
Nikitin, SE ;
Terukov, EI ;
Shadrin, EB .
TECHNICAL PHYSICS, 2005, 50 (06) :754-757
[3]   Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films [J].
Aliev, RA ;
Klimov, VA .
PHYSICS OF THE SOLID STATE, 2004, 46 (03) :532-536
[4]  
Andreev V. N., 1993, Technical Physics Letters, V19
[5]   Intercalated hydrogen in yttrium barium cuprate: The state and mobility of a "guest" and modification of the "host" properties [J].
Baikov, YM .
PHYSICS OF THE SOLID STATE, 2000, 42 (06) :1026-1035
[6]   The chemical state and the mobility of hydrogen in oxide-hydroxide solids [J].
Baikov, YM .
SOLID STATE IONICS, 1997, 97 (1-4) :471-476
[7]  
BORESKOV GK, 1986, HETEROGENEOUS CATALY
[8]  
Bugaev A. A., 1987, Soviet Physics - Solid State, V29, P1560
[9]  
BUGAEV AA, 1979, METAL SEMICONDUCTOR
[10]   INFLUENCE OF ION-BEAM PARAMETERS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ION-ASSISTED REACTIVELY EVAPORATED VANADIUM DIOXIDE THIN-FILMS [J].
CASE, FC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1762-1766