Study of CdTe etching process in alcoholic solutions of bromine

被引：35

作者：

Kotina, IM ^{[1
]}

Tukhkonen, LM

Patsekina, GV

Shchukarev, AV

Gusinskii, GM

机构：

[1] St Petersburg Nucl Phys Inst, Gatchina 188350, Russia

[2] Mekhanobr Analyt, St Petersburg, Russia

[3] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 08期

关键词：

D O I：

10.1088/0268-1242/13/8/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Changes in the structure and stoichiometry of the p-CdTe surface as a result of etching have been studied by high-resolution x-ray photoelectron spectroscopy and the Rutherford backscattering method. Etching with bromine-methanol and bromine-butanol solutions is shown to enrich the surface with elementary tellurium (Te-0). The etching process is anisotropic, in particular, the extent of enrichment with Te-0 is not the same for A and B surfaces. Arguments are developed in favour of the heterophase nature of the etched surface. The presence of water in the etches leads to Te-0 oxidation in the course of etching. The mechanism of etching is discussed based on the data obtained.

引用

页码：890 / 894

页数：5

共 17 条

[1] NEAR-BAND-EDGE PHOTOLUMINESCENCE FROM CHEMICALLY TREATED CDTE SURFACES [J].