A high-performance all-inkjetted organic transistor technology

被引：25

作者：

Molesa, SE ^{[1
]}

Volkman, SK ^{[1
]}

Redinger, DR ^{[1
]}

Vombrock, AD ^{[1
]}

Subramanian, V ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the highest performance all-printed transistors reported to date. Using nanoparticle-based printed contact, polymer dielectrics, and a printed soluble relatively thick gate dielectrics formed from multiple layers pentacene precursor semiconductor, we demonstrate all-inkjetted devices with mobilities > 0.1cm(2)/V-s and on-off ratios as high as 10(4). The performance of these devices is comparable to control devices fabricated on silicon-substrates, and thus, these devices represent a significant step towards the realization of low-cost printed electronics.

引用

页码：1072 / 1074

页数：3