Electron affinity at aluminum nitride surfaces

被引:103
作者
Wu, CI
Kahn, A [1 ]
Hellman, ES
Buchanan, DNE
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.122158
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level. valence-band maximum, conduction-hand minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces. (C) 1998 American Institute of Physics, [S0003-6951(98)01236-4].
引用
收藏
页码:1346 / 1348
页数:3
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