Energy relaxation of hot electrons driven by intense terahertz fields in two-dimensional semiconductor systems

被引：2

作者：

Lei, XL

Chen, YQ

机构：

[1] China Ctr Adv Sci & Technol, World Lab, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 06期

关键词：

D O I：

10.1063/1.368504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the frequency dependence of the energy relaxation of hot electrons under the influence of an intense oscillating electric field of terahertz frequency. The calculated energy-loss rates in a GaAs/AlGaAs heterojunction and two GaAs-based quantum wells exhibit a frequency behavior quire different from that of the widely used Kogan formula. Their ratio shows an unexpected peak at around 0.5-0.6 THz, with a height about 3-10 times of its low-frequency value. This remarkable resonance is a unique indication of the role of the Doppler shift of the phonon frequency. (C) 1998 American Institute of Physics.

引用

收藏

页码：3425 / 3427

页数：3

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