Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy

被引：42

作者：

vanWingerden, J

vanDam, A

Haye, MJ

Scholte, PMLO

Tuinstra, F

机构：

[1] Department of Applied Physics, Delft University of Technology, 2628 CJ Delft

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.55.4723

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Room-temperature deposited submonolayers of silicon on Si(001) are investigated using STM. The observed structures and the mechanisms leading to their formation are discussed. Isolated ad-dimers in different etries are described and a kinetic model for their formation is deduced. It is shown how further growth occurs via the formation of 3-atom clusters, which act as nucleation centers for the formation of two types of Linear structures. One of the line types is formed in the [110] direction, and has been observed before. The other is in the [310] direction. At a coverage of nearly 0.2 ML a kind of random network consisting of segments of the two types of atomic lines is formed. Above 0.2 ML coverage these lines are converted into epitaxial dimer rows. A pathway for this conversion is proposed on the basis of experimental observations.

引用

页码：4723 / 4730

页数：8

共 22 条

[1] SI BINDING AND NUCLEATION ON SI(100) [J].