Pattern generators and microcolumns far ion beam lithography

被引：4

作者：

Scott, KL ^{[1
]}

King, TJ

Lieberman, MA

Leung, KN

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1314384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A self-aligned microfabrication process has been developed for micron-sized extraction systems, which can be used for pattern generators or microcolumns in ion beam lithography. The extraction of ions from a plasma source through micron-sized apertures is shown not to follow traditional design rules, and the governing equations of interest for meeting design parameters are presented. First order focal properties of the pattern generator and microcolumn are described using Davisson and Calbick's derivation [C. J. Davisson and C, J. Calbick, Phys. Rev. 38, 558 (1931); 42, 580 (1932)] for an aperture lens. A second order refinement of the focal properties is characterized and explained with computer simulations using MEBS(C). (C) 2000 American Vacuum Society. [S0734-211X(00)02706-2].

引用

页码：3172 / 3176

页数：5

共 16 条

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