Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies

被引：57

作者：

Zurcher, P ^{[1
]}

Alluri, P ^{[1
]}

Chu, P ^{[1
]}

Duvallet, A ^{[1
]}

Happ, C ^{[1
]}

Henderson, R ^{[1
]}

Mendonca, J ^{[1
]}

Kim, M ^{[1
]}

Petras, M ^{[1
]}

Raymond, M ^{[1
]}

Remmel, T ^{[1
]}

Roberts, D ^{[1
]}

Steimle, B ^{[1
]}

Stipanuk, J ^{[1
]}

Straub, S ^{[1
]}

Sparks, T ^{[1
]}

Tarabbia, M ^{[1
]}

Thibieroz, H ^{[1
]}

Miller, M ^{[1
]}

机构：

[1] Motorola Inc, Mat & Struct Labs, Semicond Prod Sector, Tempe, AZ USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um(2) and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm/degreesC have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.

引用

页码：153 / 156

页数：4