Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor

被引:178
作者
Boese, D
Schoeller, H
机构
[1] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany
[2] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
来源
EUROPHYSICS LETTERS | 2001年 / 54卷 / 05期
关键词
D O I
10.1209/epl/i2001-00367-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe single-electron tunneling through molecular structures under the influence of nanomechanical excitations. We develop a full quantum-mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C-60 single-electron transistor experiment by Park et al. ( Nature, 407 (2000) 57). We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.
引用
收藏
页码:668 / 674
页数:7
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