共 7 条
[1]
Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1997, 15 (03)
:626-632
[2]
Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H-2/O-2 gas mixture
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
1996, 14 (03)
:1056-1061
[3]
Fabrication of two-dimensional InP photonic band-gap crystals by reactive ion etching with inductively coupled plasma
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
1997, 36 (12B)
:7763-7768
[4]
MATSUTANI A, 1995, LEOS 95 ANN M SAN FR, V2
[5]
High-density plasma etching of compound semiconductors
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1997, 15 (03)
:633-637
[6]
CHLORINE-BASED SMOOTH REACTIVE ION-BEAM ETCHING OF INDIUM-CONTAINING III-V COMPOUND SEMICONDUCTOR
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1992, 31 (12B)
:4381-4386
[7]
CHARACTERIZATION OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF INP
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1994, 12 (06)
:3317-3321