Low bias voltage dry etching of InP by inductively coupled plasma using SiCl4/Ar

被引:8
作者
Matsutani, A [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 12A期
关键词
dry etching; inductively coupled plasma (ICP); InP; SiCl4/Ar;
D O I
10.1143/JJAP.37.6655
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have demonstrated anisotropic and smooth etching of InP by an inductively coupled plasma (ICP) method using SiCl4/Ar and processing at a high substrate temperature. We measured the etching rate by varying the substrate temperature, process pressure and rf power. Vertical micropillars of InP with smooth etched surfaces were obtained under relatively small de biases of lower than -50 V. The ICP etching is considered to be useful for low-damage microfabrication of InP systems by optimizing the etching condition.
引用
收藏
页码:6655 / 6656
页数:2
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