Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN hetero structures grown by MOCVD

被引：82

作者：

Averine, S. V. ^{[1
]}

Kumetzov, P. I. ^{[1
]}

Zhitov, V. A. ^{[1
]}

Alkeev, N. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino 141190, Moscow Region, Russia

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 05期

关键词：

AlGaN; heterostructure; metal - semiconductor - metal (MSM) diode; solar-blind photodetector; high-speed response; Schottky barrier;

D O I：

10.1016/j.sse.2007.10.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solar-blind MSM-photodetectors based on the AlGaN/GaN heterostructutes grown by MOCVD technology were fabricated and investigated. Directly on the MSM-diode we have measured a Schottky barrier height of 1.1 eV for Ni and 1.4 eV for Mo contacts on AlGaN. Effect of different buffer layers on the detector performances has been demonstrated. Detectors exhibit low dark currents and high sensitivity within the range of 250 - 290 nm. High-speed response of MSM-detectors is analyzed. Effect of optical excitation level on detector performance is discussed. At low excitation level the detector speed of response is limited by parasitic capacitance of interdigitated diode structure and by the transit time of the photogenerated carriers. At high excitation level the detector speed of response is limited by the field screening caused by the space-charge of the holes. The impulse response of AlGaN/GaN MSM-detector is compared favorably with GaAs MSM-device. (c) 2007 Published by Elsevier Ltd.

引用

页码：618 / 624

页数：7

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