Directed growth of nickel silicide nanowires

被引：84

作者：

Decker, CA ^{[1
]}

Solanki, R

Freeouf, JL

Carruthers, JR

Evans, DR

机构：

[1] OGI Sch Sci & Engn, Beaverton, OR 97006 USA

[2] Sharp Labs Amer, Camas, WA 98607 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 08期

关键词：

D O I：

10.1063/1.1650877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deposition of nickel silicide nanowires has been achieved in the temperature range of 320 to 420degreesC by decomposition of silane on nickel surfaces. The substrates consisted of Ni foils and thin Ni films (similar to10-100 nm) evaporated on 1-mum-thick layers of SiO2 predeposited on Si wafers. Nanowire growth between two metal pads was achieved with aid of an electric field. It was found that thinner diameter nanowires were produced at low temperatures and that the density of the nanowires was dependent on the reactor pressure. The current-voltage relationship of these nanowires has also been examined. (C) 2004 American Institute of Physics.

引用

收藏

页码：1389 / 1391

页数：3

相关论文

共 17 条

[1] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].

Chen, Y ;

Ohlberg, DAA ;

Medeiros-Ribeiro, G ;

Chang, YA ;

Williams, RS .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006

[2] Diameter-controlled synthesis of single-crystal silicon nanowires [J].

Cui, Y ;

Lauhon, LJ ;

Gudiksen, MS ;

Wang, JF ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2214-2216

[3] THE DECOMPOSITION OF SILANE AND GERMANE ON NI(111) - IMPLICATIONS FOR HETEROGENEOUS CATALYSIS [J].

DUBOIS, LH ;

NUZZO, RG .

SURFACE SCIENCE, 1985, 149 (01) :133-145

[4] REACTIVITY OF INTERMETALLIC THIN-FILMS FORMED BY THE SURFACE MEDIATED DECOMPOSITION OF MAIN GROUP ORGANOMETALLIC COMPOUNDS [J].

DUBOIS, LH ;

NUZZO, RG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :441-445

[5] A comparative study of leakage mechanism of Co and Ni salicide processes [J].

Goto, K ;

Watanabe, J ;

Sukegawa, T ;

Fushida, A ;

Sakuma, T ;

Sugii, T .

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, :363-369

[6]

HANSEN M, 1959, CONSTITUTION BINARY, P1039

[7] KINETICS AND NUCLEATION MODEL OF THE C49 TO C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS ON DEEP-SUB-MICRON N(+) TYPE POLYCRYSTALLINE SILICON LINES [J].

KITTL, JA ;

PRINSLOW, DA ;

APTE, PP ;

PAS, MF .

APPLIED PHYSICS LETTERS, 1995, 67 (16) :2308-2310

[8] COMPARISON OF TRANSFORMATION TO LOW-RESISTIVITY PHASE AND AGGLOMERATION OF TISI2 AND COSI2 [J].

LASKY, JB ;

NAKOS, JS ;

CAIN, OJ ;

GEISS, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :262-269

[9]

MAEX K, 1995, PROPERTIES METAL SIL

[10]

Murarka S.P., 1983, Silicides for VLSI applications, P71