First observation of thermal runaway in the radiation damaged silicon detector

被引：14

作者：

Kohriki, T ^{[1
]}

Kondo, T ^{[1
]}

Iwasaki, H ^{[1
]}

Terada, S ^{[1
]}

Unno, Y ^{[1
]}

Ohsugi, T ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT PHYS,HIGASHIHIROSHIMA 724,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

Cold storage - Computer simulation - Electric field effects - Finite element method - Leakage currents - Microstrip devices - Neutrons - Particle beams - Protons - Radiation damage - Thermal effects - Thermodynamic properties;

D O I：

10.1109/23.506663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon microstrip detector irradiated with a fluence of 4.2 x 10(13) protons/cm(2) was demonstrated to give rise to detector thermal runaway. The temperature and voltage dependence can be fairly well reproduced by a finite element thermal simulation with temperature dependent bulk leakage current.

引用

页码：1200 / 1202

页数：3

共 8 条

[1]

CHILINGAROV A, 1994, 27 INT C HIGH EN PHY

[2] RADIATION-DAMAGE OF SILICON JUNCTION DETECTORS BY NEUTRON-IRRADIATION [J].

HASEGAWA, M ;

MORI, S ;

OHSUGI, T ;

KOJIMA, H ;

TAKETANI, A ;

KONDO, T ;

NOGUCHI, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 277 (2-3) :395-400

[3]

IWASAKI H, 1995, 2 INT S DEV APPL SEM

[4]

KOHRIKI K, 1995, 94186 KEK

[5]

KONDO T, 1984, 1984 P SUMM STUD DES, P612

[6]

OHSUGI T, 1988, NUCL INSTRUM METH A, V65, P105

[7]

SADROZINSKI H, 1994, 9406 SCIPP

[8]

ZIOK HJ, 1993, IEEE T NUCL SCI, V40, P344

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