Bottom-contact poly(3,3′′′-didodecylquaterthiophene) thin-film transistors with reduced contact resistance

被引：18

作者：

Cai, Qin Jia ^{[1
]}

Chan-Park, Mary B. ^{[1
]}

Zhang, Jun ^{[2
,3
]}

Gan, Ye ^{[2
,3
]}

Li, Chang Ming ^{[2
,3
]}

Chen, Tu Pei ^{[4
]}

Ong, Beng S. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637459, Singapore

[2] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637457, Singapore

[3] Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[5] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 01期

关键词：

poly(3,3 '-didodecylquaterthiophene); contact resistance; thin-film transistors; electrodes; treatment; interface;

D O I：

10.1016/j.orgel.2007.07.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A dramatic, similar to 20-fold, reduction in the contact resistance of the bottom-contact poly(3,3'''-didodecylquaterthiophene) (PQT-12) thin-film transistors was achieved through a simple treatment of gold (Au) source and drain electrodes. The Au electrode treatment involved simply immersing the Au electrodes into Piranha solution prior to the deposition of the organic semiconductor. This treatment led to significant improvement of device performance. Channel length scaling analysis indicates that the contact resistance is reduced by about one order of magnitude, resulting in enhancement of estimated field-effect mobility by about a factor of five. Transport characteristic analysis suggests that the improved efficiency of charge carrier injection is probably due to increased dopant density of PQT-12 at the electrode/PQT-12 interface. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：14 / 20

页数：7

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