Near-field photolithography with a solid immersion lens

被引：137

作者：

Ghislain, LP

Elings, VB

Crozier, KB

Manalis, SR

Minne, SC

Wilder, K

Kino, GS

Quate, CF

机构：

[1] Digital Instruments, Santa Barbara, CA 93117 USA

[2] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have exposed 190 nm lines in photoresist by focusing a laser beam (lambda=442 nm) in a solid immersion lens (SIL) that is mounted on a flexible cantilever and scanned by a modified commercial atomic force microscope. The scan rate was 1 cm/s, which is several orders of magnitude faster than typical reports of near-field lithography using tapered optical fibers. The enhanced speed is a result of the high optical efficiency (about 10(-1)) of the SIL. Once exposed with the SIL, the photoresist was developed and the pattern was transferred to the silicon substrate by plasma etching. (C) 1999 American Institute of Physics. [S0003-6951(99)05204-3].

引用

页码：501 / 503

页数：3

共 16 条

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