Direct observation of hydrogen etching anisotropy on diamond single crystal surfaces

被引：71

作者：

Cheng, CL ^{[1
]}

Chang, HC ^{[1
]}

Lin, JC ^{[1
]}

Song, KJ ^{[1
]}

Wang, JK ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,CTR CONDENSED MATTER SCI,TAIPEI 106,TAIWAN

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.78.3713

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Etching of natural diamonds by atomic hydrogen has been investigated on C(100), C(110), and C(111) single crystal surfaces. Infrared absorption spectroscopy and low-energy electron diffraction provide direct evidence for an etching anisotropy at 1100 K. The results indicate that, in the presence of atomic hydrogen, {111}-oriented facet formation irreversibly occurs on both C(110) and C(100), whereas C(111) remains intact. The finding has important implications for chemical vapor deposition diamond synthesis and H-plasma surface polishing.

引用

页码：3713 / 3716

页数：4

共 26 条

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