Characterization of p-type PbEuTe/PbTe MQW structures with high thermoelectric figures of merit in the PbTe quantum wells

被引：25

作者：

Harman, TC ^{[1
]}

Spears, DL ^{[1
]}

Calawa, DR ^{[1
]}

Groves, SH ^{[1
]}

Walsh, MP ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667169

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

A large enhancement in the Seebeck coefficient, thermoelectric power factor and figure of merit (Z(2D)T) is reported in very high carrier concentration p-type PbTe quantum wells grown by molecular beam epitaxy. The estimated Z(2D)T (using accepted bulk values for lattice thermal conductivity) is as high as 1.5 at 300 K. Power factor values up to 160 mu Wcm(-1)K(-2) were measured at 300 K, indicating a power factor in p-type quantum wells that is approximately five times the best bulk or homogeneous p-type value. Thinner barriers yielded lower thermoelectric power factors and figures of merit. The high power factor was achieved with a barrier thickness less than half that previously used to demonstrate enhanced thermoelectric power factors in n-type quantum wells. X-ray diffraction/reflection characterization results of the multiple-quantum-well (MQW) structures at both low and high Bragg angles yield precise values for the MQW periodicity.

引用

页码：416 / 423

页数：8