A new high temperature electrode-barrier technology on high density ferroelectric capacitor structure

被引：2

作者：

Onishi, S

Nagata, M

Mitarai, S

Ito, Y

Kudo, J

Sakiyama, K

Desu, SB

Bhatt, HD

Vijay, DP

Hwang, Y

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.554077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the novel stacked electrode structure, PtRhOx/PtRh/PtRhOx, applicable to stacked memory cells in the advanced ferroelectric memories. This structure acts as a stable bottom electrode on the polysilicon plug up to 700 degrees C, and reduces fatigue of PZT capacitor(less than 10% decrease in remanent polarization up to 10(10)cycle), which indicates its promise as an electrode structure for advanced ferroelectric memory integration.

引用

页码：699 / 702

页数：4