Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation

被引：13

作者：

Chang, TC

Chou, MF

Mei, YJ

Tsang, JS

Pan, FM

Wu, WF

Tsai, MS

Chang, CY

Shih, FY

Huang, HD

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Nano Device Lab, Hsinchu 300, Taiwan

[4] Dow Corning Taiwan Inc, Chungli, Taiwan

来源：

THIN SOLID FILMS | 1998年 / 332卷 / 1-2期

关键词：

hydrogen silsesquioxane; ion implantation; low dielectric constant;

D O I：

10.1016/S0040-6090(98)01036-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low density material such as hydrogen silsesquioxane (HSQ) can provide a lower dielectric constant than a conventional silicon dioxide insulator. However, the thermal stability of as-cured HSQ is about 400 degrees C. Both the leakage current and dielectric constant of HSQ rapidly increase with increasing annealing temperature. In this work, we study the enhancement of the thermal stability of the HSQ film by fluorine ion implantation treatment. The fluorine implantation step can enhance the thermal stability of the HSQ film as high as 500 degrees C. In addition, the implantation treatment after the curing step is more efficient in enhancing the thermal stability of the HSQ film than before the curing step. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：351 / 355

页数：5