Atomic and electronic structures of thallium-based III-V-VI2 ternary chalcogenides:: Ab initio calculations

被引:27
作者
Hoang, Khang [1 ]
Mahanti, S. D. [1 ]
机构
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
来源
PHYSICAL REVIEW B | 2008年 / 77卷 / 20期
关键词
D O I
10.1103/PhysRevB.77.205107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The atomic and electronic structures Of III-V-VI(2) ternary chalcogenides (III=Tl, V=Sb and Bi, and VI =Te, Se, and S) have been studied using ab initio electronic structure calculations. Most of these compounds are found to take rhombohedral structures as their lowest energy structures (except-for TlSbS(2), which takes a triclinic structure), in agreement with experiments. There is a disagreement between theory and experiment in the case of TlSbSe(2), wherein our calculations identify a rhombohedral structure (as yet hypothetical), which has lower energy than a monoclinic one (given by experiment). Band-gap formation in these ternaries are controlled by a highly directional hybridization between the cation (Sb, Bi), anion (S, Se, Te), and Tl p states, and the electronic structure near the Fermi level is sensitive to the ordering on the cation sublattice.
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页数:7
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