High aspect ratio etching in polymer for microactuator applications

被引:2
作者
Lee, WY
Gao, J
Hirano, T
Chan, S
Fan, LS
机构
来源
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY III | 1997年 / 3223卷
关键词
high aspect ratio polymer etching; inductively coupled plasma; microactuator;
D O I
10.1117/12.284471
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High aspect ratio line and trench plating molds suitable for microactuator applications were etched in polymer using oxygen plasma in an RF inductive plasma etcher. A high vertical etch rate of similar or equal to 2.5 mu m/min in a polymer has been achieved for 2 mu m wide lines and trenches, with even higher rates being observed for wider trenches due to the usual RIE lag effect. The lateral etch rate can be reduced by adjusting the inductive to bias power ratio, and by lowering the etch temperatures. Under optimum etching conditions, aspect ratios of close to 20:1 in a 2.5 mu m line/2.0 mu m spacing pattern and of greater than 20:1 in isolated 2.0 mu m lines with equal to or greater than 5 mu m spacing have been achieved.
引用
收藏
页码:110 / 117
页数:8
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