Dielectric relaxation behaviour of Bi:SrTiO3:: II.: Influence of heat treatment on dielectric properties

被引:23
作者
Zhi, Y
Chen, A [1 ]
Vilarinho, PM
Mantas, PQ
Baptista, JL
机构
[1] Univ Aveiro, Dept Ceram & Glass Engn, P-3800 Aveiro, Portugal
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
关键词
D O I
10.1016/S0955-2219(98)00028-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The study of the dielectric properties of (Sr1-1.5xBix)TiO3 ceramics in a range of temperatures and at several frequencies showed that a set of permittivity peaks situated around 200-300 K had frequency dispersion behaviour. These peaks were shifted to higher temperatures when the Bi content increased irt the solid solution. The activation energy calculated for the relaxation varied between 0.32-0.49 eV. This set of permittivity peaks vanished if the samples were annealed in air or oxygen and their permittivity maximum was increased by annealing in nitrogen. The temperature dependence of resistance rr ns also measured. The origin of dielectric behaviour is discussed in the present paper. (C) 1998 Elsevier Science Limited. All rights reserved.
引用
收藏
页码:1621 / 1628
页数:8
相关论文
共 26 条
[1]  
ANG C, 1992, J APPL PHYS, V71, P4451, DOI 10.1063/1.350787
[2]   DIELECTRIC-PROPERTIES OF DONOR-DOPED POLYCRYSTALLINE SRTIO3 [J].
BURN, I ;
NEIRMAN, S .
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (12) :3510-3524
[3]   NON-STOICHIOMETRY IN SRTIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1762-1769
[4]   Dispersion and absorption in dielectrics I. Alternating current characteristics [J].
Cole, KS ;
Cole, RH .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (04) :341-351
[5]   HIGH-TEMPERATURE DEFECT STRUCTURE OF ACCEPTOR-DOPED STRONTIUM-TITANATE [J].
EROR, NG ;
BALACHANDRAN, U .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1982, 65 (09) :426-431
[6]   SELF-COMPENSATION IN LANTHANUM-DOPED STRONTIUM-TITANATE [J].
EROR, NG ;
BALACHANDRAN, U .
JOURNAL OF SOLID STATE CHEMISTRY, 1981, 40 (01) :85-91
[7]  
GUBKIN AN, 1961, SOV PHYS-SOL STATE, V3, P807
[8]   DIELECTRIC RELAXATIONS IN SRTIO3 DOPED WITH LA2O3 AND MNO2 AT LOW-TEMPERATURES [J].
IGUCHI, E ;
LEE, KJ .
JOURNAL OF MATERIALS SCIENCE, 1993, 28 (21) :5809-5813
[9]   DIELECTRIC RELAXATION IN STRONTIUM TITANATES CONTAINING RARE-EARTH IONS [J].
JOHNSON, DW ;
CROSS, LE ;
HUMMELL, FA .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2828-&
[10]  
Jonscher A. K., 1983, DIELECTRIC RELAXATIO, P326