A near-edge X-ray absorption fine structure study of atomic layer epitaxy: the chemistry of the growth of CdS layers on ZnSe(100)

被引：21

作者：

Han, M

Luo, Y

Moryl, JE

Osgood, RM ^{[1
]}

Chen, JG

机构：

[1] Columbia Univ, Columbia Radiat Lab, New York, NY 10027 USA

[2] Exxon Res & Engn Co, Annandale, NJ 08801 USA

来源：

SURFACE SCIENCE | 1998年 / 415卷 / 03期

基金：

美国国家科学基金会;

关键词：

atomic layer epitaxy (ALE); CdS; (CH3)(2)Cd; heteroepitaxy; H2S; near-edge X-ray absorption fine structure (NEXAFS); surface chemistry; synchrotron radiation; temperature programmed desorption (TPD); thin film deposition; II-IV semiconductors surface chemistry; ZnSe(100);

D O I：

10.1016/S0039-6028(98)00453-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer epitaxy (ALE) using a binary reaction sequence of the precursors dimethylcadmium (DMCd) and hydrogen sulfide (H2S) is shown to produce epitaxial layers of CdS on a ZnSe(100) substrate. Near-edge X-ray adsorption fine structure (NEXAFS) spectra taken at the carbon K-edge and sulfur L-edge are consistent with a growth model based on self-limiting surface reactions and support a mechanism based on sequential surface ligand displacement. This evidence, combined with a TPD study, shows the presence of alternating methyl- and hydride-terminated surfaces, which are passivated to further uptake of Cd or S, respectively. Layer-by-layer growth of good quality CdS was confirmed by comparison of NEXAFS spectra of bulk CdS with our grown films. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：251 / 263

页数：13

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