Ferromagnetic moment and antiferromagnetic coupling in (Ga,Mn)As thin films

被引：101

作者：

Edmonds, KW ^{[1
]}

Farley, NRS

Johal, TK

van der Laan, G

Campion, RP

Gallagher, BL

Foxon, CT

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CCLRC Daresbury Lab, Warrington WA4 4AD, Cheshire, England

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.71.064418

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that carefully prepared (Ga,Mn)As films can show large magnetic moments per atom across a wide range of Mn concentrations, indicating almost full participation of the Mn in the ferromagnetism. Applying sum rules to Mn L-2,L-3 x-ray magnetic circular dichroism (XMCD) spectra yields a magnetic moment per Mn of around 4.5 mu(B), including a small positive orbital moment. We also present direct evidence for antiferromagnetic coupling between interstitial and substitutional Mn in unannealed (Ga,Mn)As. The Mn L-2,L-3 x-ray absorption line shapes display no sizeable site or concentration dependence, but in unannealed (Ga,Mn)As the XMCD signal is significantly smaller, and increases linearly under high magnetic fields.

引用

页数：5

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