IMD elimination and ACPR improvement for an 800 MHz HBT MMIC power amplifier

被引：8

作者：

Ali, F ^{[1
]}

Moazzam, MR ^{[1
]}

Aitchison, C ^{[1
]}

机构：

[1] Nokia Mobile Phones, San Diego, CA 92121 USA

来源：

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/RFIC.1998.682050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a novel technique for reducing the third order intermodulation (IMD) product and ACPR levels in HBT power amplifiers. This technique is based on the dynamic control of the injection/feedback of the second harmonic frequency signal to the amplifier. For a cellular frequency HBT MMIC power amplifier, a reduction of 44 dB in the 3rd order IMD level is measured at 28 dBm output power. By controlling the phase and amplitude of the injected/fedback second harmonic, a total rejection of IMD products over a wide dynamic range of input power is achieved without any change in the fundamental signal levels. The ACPR for CDMA system (IS-98 standard) over a 30 KHz bandwidth with +/-900 KHz offset shows a 6 dB improvement. No degradation in the CDMA signal quality factor (rho) and PAE (40%) are observed. To the best of our knowledge this is the first application of this technique to HBT power amplifiers.

引用

页码：69 / 71

页数：3