Diameter control of tungsten oxide nanowires as grown by thermal evaporation

被引：36

作者：

Hong, Kunquan ^{[1
,2
]}

Xie, Maohai ^{[1
,2
]}

Hu, Rong ^{[1
,2
]}

Wu, Huasheng ^{[1
,2
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 08期

关键词：

D O I：

10.1088/0957-4484/19/8/085604

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tungsten oxide nanowires with controllable diameter were synthesized on Si substrates by thermal evaporation of tungsten trioxide powder in a tube furnace. Depending on the temperature of the source ( 900-1000 degrees C), tungsten oxide W(18)O(49) nanowires with diameters ranging from 10 to 100 nm are obtained with high yield. The exponential dependence of the nanowire diameter on the source temperature leads to an energy of about 2.0 eV. The growth process is discussed; it is believed to be a kinetic effect.

引用

页数：5

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