Electronic structure and bonding in crystalline Y10[SiO4]6N2

被引:7
作者
Ching, WY [1 ]
Xu, YN [1 ]
Ouyang, LZ [1 ]
机构
[1] Univ Missouri, Dept Phys, Kansas City, MO 64110 USA
关键词
D O I
10.1111/j.1151-2916.2003.tb03487.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The electronic structure and bonding of the complex ceramic crystal Y-10[SiO4](6)N-2 is studied by a first-principles method. It is shown that this crystal is an insulator with a direct band gap of 1.3 eV. It has some unique properties related to the one-dimensional chain structure in the c-direction and the planar N-Y bonding in the x-y plane.
引用
收藏
页码:1424 / 1426
页数:3
相关论文
共 21 条
[1]  
[Anonymous], 1944, Proceedings of the National Academy of Sciences of the United States of America
[2]   THEORETICAL-STUDIES OF THE ELECTRONIC-PROPERTIES OF CERAMIC MATERIALS [J].
CHING, WY .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3135-3160
[3]  
Ching WY, 2002, J AM CERAM SOC, V85, P11, DOI 10.1111/j.1151-2916.2002.tb00030.x
[4]   Comparative study of the electronic structure of two laser crystals:: BeAl2O4 and LiYF4 -: art. no. 115101 [J].
Ching, WY ;
Xu, YN ;
Brickeen, BK .
PHYSICAL REVIEW B, 2001, 63 (11)
[5]   Full ab initio geometry optimization of all known crystalline phases of Si3N4 [J].
Ching, WY ;
Ouyang, LZ ;
Gale, JD .
PHYSICAL REVIEW B, 2000, 61 (13) :8696-8700
[6]   Prediction of the new spinel phase of Ti3N4, and SiTi2N4 and the metal-insulator transition [J].
Ching, WY ;
Mo, SD ;
Ouyang, L ;
Tanaka, I ;
Yoshiya, M .
PHYSICAL REVIEW B, 2000, 61 (16) :10609-10614
[7]  
CHING WY, UNPUB
[8]   SYSTEM SI3N4-SIO2-Y2O3 [J].
GAUCKLER, LJ ;
HOHNKE, H ;
TIEN, TY .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1980, 63 (1-2) :35-37
[9]   HIGH-PRESSURE CRYSTAL-CHEMISTRY AND AMORPHIZATION OF ALPHA-QUARTZ [J].
HAZEN, RM ;
FINGER, LW ;
HEMLEY, RJ ;
MAO, HK .
SOLID STATE COMMUNICATIONS, 1989, 72 (05) :507-511
[10]  
HOFFMANN MJ, 1994, NATO ADV SCI INST SE, V276, P59