One-step fabrication of uniform Si-core/CdSe-sheath nanocables

被引:85
作者
Li, Q [1 ]
Wang, CR [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
关键词
D O I
10.1021/ja035787i
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A simple one-step thermal evaporation of CdSe powder using Si substrate at controlled conditions results in ultrauniform Si-core/CdSe-sheath nanocables. These nanocables are ≃80 nm in diameter and several tens of micrometers in length. Detailed microstructure and chemical composition analysis of the nanocables indicates that they are composed of a single crystalline Si (cubic) core and CdSe (hexagonal) sheath. The experimental evidence suggested that the Si nanowires can be directly grown from the Si substrate via an oxide-assisted growth mechanism and further served as templates for CdSe, resulting in nanocable heterostructures. Copyright © 2003 American Chemical Society.
引用
收藏
页码:9892 / 9893
页数:2
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