Electronic and structural properties of two-dimensional carbon nitride graphenes

被引:363
作者
Deifallah, Malek [1 ]
McMillan, Paul F. [1 ,2 ,3 ]
Cora, Furio [1 ,2 ,3 ,4 ]
机构
[1] UCL, Davy Faraday Res Lab, London WC1E 6BT, England
[2] UCL, Dept Chem, Christopher Ingold Lab, London WC1H 0AJ, England
[3] UCL, Mat Chem Ctr, Christopher Ingold Lab, London WC1H 0AJ, England
[4] UCL, Mat Simulat Lab, London WC1E 6BT, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1021/jp711483t
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structure and electronic properties of single-layered carbon nitride graphenes are examined computationally with hybrid-exchange functionals in periodic density functional theory calculations. Unlike pure carbon graphene that provides a metallic nanomaterial, carbon nitride graphenes form semiconductors with band gaps ranging up to 5 eV. The band gap is sensitive to external perturbations that can be introduced chemically by adatom adsorption or physically by constraining the lattice parameter. Carbon nitride graphenes could possibly pave the way for a new range of smaller and faster transistors, as well as have useful sensing and actuating properties.
引用
收藏
页码:5447 / 5453
页数:7
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