Determination of limiting factors of photovoltaic efficiency in quantum dot sensitized solar cells: Correlation between cell performance and structural properties

被引:43
作者
Gimenez, Sixto [1 ]
Lana-Villarreal, Teresa [2 ,3 ]
Gomez, Roberto [2 ,3 ]
Agouram, Said [4 ,5 ]
Munoz-Sanjose, V. [4 ]
Mora-Sero, Ivan [1 ]
机构
[1] Univ Jaume 1, Dept Fis, Photovolta & Optoelect Devices Grp, Castellon de La Plana 12071, Spain
[2] Univ Alacant, Dept Quim Fis, E-03080 Alacant, Spain
[3] Univ Alacant, Inst Univ Electroquim, E-03080 Alacant, Spain
[4] Univ Valencia, Dept Appl Phys & Electromagnetism, E-46100 Burjassot, Spain
[5] Univ Valencia, SCSIE, E-46100 Burjassot, Spain
关键词
cracks; fracture mechanics; fracture toughness; graphene; molecular dynamics method; Young's modulus; SOLUTION DEPOSITION; TIO2; NANOPARTICLES; ELECTRON INJECTION; CDTE NANOCRYSTALS; CDSE; FILMS; SIZE; DYE; PBS; PHOTOSENSITIZATION;
D O I
10.1063/1.3477194
中图分类号
O59 [应用物理学];
学科分类号
摘要
Semiconductor quantum dots (QDs) are important candidates as light absorbing materials in low cost and high efficiency sensitized solar cells (SCs). We present a combination of structural, chemical, electrical, and optical characterization that provides insight to the photovoltaic efficiencies of devices formed by TiO(2) electron conducting oxide network sensitized with CdSe. In devices using colloidal QDs the collection efficiency under short circuit conditions (CESCs) for photoinjected electrons is rather high (similar to 90%) but the photovoltaic performance is limited by the low loading of QDs into the mesoporous TiO(2) structure. On the other hand, chemical bath deposited (CBD) QDSCs exhibit a remarkably high optical density, but only slightly higher short circuit current and efficiency. It is observed that CESC is similar to 50% due to the high recombination rates of the closed packed QDs structure. Our results indicate routes for improvement of QDSCs performance by the increase in colloidal QDs loading and the reduction in recombination in QDs grown in situ. (C) 2010 American Institute of Physics. [doi:10.1063/1.3477194]
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页数:7
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