Optimization of etch conditions for a silicon-containing methacrylate based bilayer resist for 193 nm lithography

被引：10

作者：

Steinhausler, T ^{[1
]}

Gabor, AH ^{[1
]}

White, D ^{[1
]}

Blakeney, AJ ^{[1
]}

Stark, DR ^{[1
]}

Miller, DA ^{[1
]}

Rich, GK ^{[1
]}

Graffenberg, VL ^{[1
]}

Dean, KR ^{[1
]}

机构：

[1] Olin Microelect Mat, E Providence, RI 02914 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

193; nm; bilayer resist; silicon-containing methacrylate; polysilicon etch;

D O I：

10.1117/12.312373

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The 193 nm photoresist generation will need several technological approaches in order for it to be successfully integrated into manufacturing. These approaches include bilayer, single layer and top surface imaging resists. Bilayer resists offer the advantages of thin film imaging (resolution, depth of focus) and potential advantages in plasma etch resistance due to the possibility of incorporating aromatic components into the undercoat. We have developed a prototype bilayer resist system based on a silicon containing methacrylate imageable layer and a crosslinked styrenic copolymer undercoat which has shown 0.13 mu m resolution. In this paper we will discuss the effects of O-2-RIE and polysilicon etch on resist and substrate profile, selectivity and iso-dense bias.

引用

页码：122 / 131

页数：2