Arsenic diffusion in intrinsic gallium arsenide

被引：10

作者：

Bosker, G ^{[1
]}

Stolwijk, NA ^{[1
]}

Mehrer, H ^{[1
]}

Sodervall, U ^{[1
]}

Thordson, JV ^{[1
]}

Anderson, TG ^{[1
]}

Burchard, A ^{[1
]}

机构：

[1] Univ Munster, Inst Met Forsch, D-48149 Munster, Germany

来源：

DIFFUSION MECHANISMS IN CRYSTALLINE MATERIALS | 1998年 / 527卷

关键词：

D O I：

10.1557/PROC-527-347

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-diffusion on the As sublattice in intrinsic GaAs was investigated in a direct way by As tracer diffusion measurements using the radioisotopes As-73 and As-76 and in an indirect way by annealing of buried nitrogen doping layers in epitaxially grown GaAs/GaAs:N heterostructures. The latter experiments were analyzed by secondary ion mass spectroscopy and interpreted within the framework of the kick-out mechanism yielding the As diffusivities D-As(I) mediated by As interstitials I-As. Comparison of D-As(I) with tracer diffusion coefficients D-As(T) - including data reported in the literature - points to a substantial contribution of I-As to As diffusion in intrinsic GaAs under As-rich ambient conditions.

引用

页码：347 / 356

页数：10