Influence of the implantation parameters on the microstructure of carbon onions produced by carbon ion implantation

被引:28
作者
Cabioc'h, T [1 ]
Jaouen, M [1 ]
Denanot, MF [1 ]
Bechet, P [1 ]
机构
[1] Univ Poitiers, Met Phys Lab, CNRS, UMR 6630, F-86660 Futuroscope, France
关键词
D O I
10.1063/1.122684
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the influence of implantation parameters (temperature, implanted dose, and current density) on the microstructure of carbon onions produced by carbon ion implantation into silver substrates held at elevated temperature. Carbon onions are synthesized only for temperatures higher than 400 degrees C. An increase of the average diameter of the onions as well as a structure presenting less defects are observed when the temperature increases from 500 to 800 degrees C. For implantation doses varying from 5 x 10(16) cm(-2) to 5 x 10(17) cm(-2), we observe an increase of the average diameter, spherical onions with a very sharp distribution in size being obtained for doses less than or equal to 10(17) cm(-2). We also vary the current density of the carbon ion beam from 2 to 45 mu A cm(-2), but this parameter does not induce any visible microstructural evolution of the onions. From the results presented here, one can now carry out studies related to the evolution of the physical properties of well defined size carbon onions having a controlled amount of defects. (C) 1998 American Institute of Physics. [S0003-6951(98)04844-X].
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页码:3096 / 3098
页数:3
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