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Ir-electroded BST thin film capacitors for 1 giga-bit DRAM application
被引：19
作者：
Chen, TS
Hadad, D
Balu, V
Jiang, B
Kuah, SH
McIntyre, PC
Summerfelt, SR
Anthony, JM
Lee, JC
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.554072
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
(Ba,Sr)TiO3 (BST) thin film capacitors using iridium (Ir) as an electrode material are investigated for high density (1 Gbit-scale and beyond) dynamic random access memories (DRAMs). Excellent electrical characteristics (e.g. high polarization and low leakage) of BST capacitors with Ir top electrodes were obtained. The excellent resistance of these capacitors to hydrogen damage during forming gas anneals is also reported.
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页码：679 / 682
页数：4
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