Low-power embedded SRAM macros with current-mode read/write operations

被引：7

作者：

Wang, JS ^{[1
]}

Yang, PH ^{[1
]}

Tseng, W ^{[1
]}

机构：

[1] Chung Cheng Univ, Dept Elect Engn, Chiayi, Taiwan

来源：

1998 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/LPE.1998.708203

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The newly proposed SRAM performs both read and write operations in the current-mode. Due to the current-mode operations, voltage swings at bit-lines and data-lines are kept very small during read and write. The AC power dissipation of bit-lines and data-lines can thus be saved efficiently. For an embedded SRAM macro used in an 8-bit mu-controller, the SRAM using the fully current-mode technique consumes only 30% power dissipation as compared to the SRAM with only current-mode read operation. Experimental results show good agreement with the simulation results and prove the feasibility of the new technique.

引用

页码：282 / 287

页数：6