A study on thin film gas sensor based on SnO2 prepared by pulsed laser deposition method

被引：30

作者：

Kim, CK ^{[1
]}

Choi, SM

Noh, IH

Lee, JH

Hong, C

Chae, HB

Jang, GE

Park, HD

机构：

[1] Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea

[2] Soonchunhyang Univ, Dept Informat & Phys, Asan 336745, Choongnam, South Korea

[3] Chungbuk Natl Univ, Dept Mat Engn, Cheongju 361763, Chungbuk, South Korea

[4] Korea Elect Technol Inst, MEMS Res Team, Pyungtaek 451860, Kyonggi Do, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 77卷 / 1-2期

关键词：

PLD; SnO2; microsensor; Nd : YAG laser; MEMS;

D O I：

10.1016/S0925-4005(01)00726-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

SnO2 thin films were fabricated by pulsed laser deposition (PLD) technique using Sn metallic target under ambient O-2 gas. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to investigate the morphology and structure of the films. From a study of the gas sensing characteristics of SnO2 films, it was evident that if the shorter wavelength of the laser beam was used for film deposition. the better sample was obtained. The sample, heated to 375 degreesC during ablation and post-annealed at 500 degreesC for 4 h, showed higher sensitivity compared to sample which was not heated. It can be explained, that the substrate heating is needed to compensate the kinetic energy of particles in laser plasma decreased due to loose-focusing. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：463 / 467

页数：5

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