Solution processing of active semiconducting polymers and conducting polymer anodes for fabricating photodetectors

The light-detecting properties were studied for devices fabricated by a method involving screen-printing of an active semiconducting polymer layer. The active layer in the device is a blend consisting of an intrinsically n-type polymer poly(benzimidazobenzophenanthroline) dispersed in a matrix of intrinsically p-type polymer poly(3-octylthiophene). The anode in the device is a doped conducting polymer. The photocarrier generation efficiencies in the active layer are enhanced due to formation of donor acceptor networks at small length scales. The solution processing is advantageous in forming devices on flexible and curved substrates.