Growth of Si and C delta-doped nipi doping superlattices in GaAs by metal organic vapor phase epitaxy

被引：13

作者：

Li, G ^{[1
]}

Jagadish, C ^{[1
]}

Johnston, MB ^{[1
]}

Gal, M ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH PHYS,SYDNEY,NSW 2052,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 27期

关键词：

D O I：

10.1063/1.116991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have optimized growth conditions of metal organic vapor phase epitaxy (MOVPE) in order to grow Si and C delta-doped nipi doping superlattices in GaAs. Trimethylaluminium (TMAl) and silane (SiH4) were used as p-type and n-type doping precursors, respectively. We report that at 630 degrees C, full compensation of free electrons and holes can be obtained in the MOVPE-grown Si and C delta-doped nipi doping superlattices over a very wide range of the sheet carrier densities (10(12)-10(13) cm(-2)) by choosing proper TMAl flow rate and Si delta-doping time or SiH4 flow rate. The experimental results on electrical and optical characterization of Si and C delta-doped nipi doping superlattices in GaAs with 150 Angstrom thick undoped spacer layers are presented. (C) 1996 American Institute of Physics.

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页码：4218 / 4220

页数：3

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