A Twisted Thieno[3,4-b] thiophene-Based Electron Acceptor Featuring a 14-π-Electron Indenoindene Core for High-Performance Organic Photovoltaics

被引:199
作者
Xu, Shengjie [1 ]
Zhou, Zichun [1 ,2 ]
Liu, Wuyue [1 ,2 ]
Zhang, Zhongbo [1 ,2 ]
Liu, Feng [3 ]
Yan, Hongping [4 ]
Zhu, Xiaozhang [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Chem & Chem Engn, Beijing 100049, Peoples R China
[3] Shanghai Jiao Tong Univ, Dept Phys & Astron, Shanghai 200240, Peoples R China
[4] Stanford Univ, Dept Chem Engn, 443 Via Ortega, Stanford, CA 94305 USA
基金
中国国家自然科学基金;
关键词
indenoindene; nonfullerene acceptors; organic solar cells; power conversion efficiency; thieno[3,4-b] thiophene; POLYMER SOLAR-CELLS; SMALL-MOLECULE; HIGH-EFFICIENCY; ENERGY; ACHIEVE; DESIGN;
D O I
10.1002/adma.201704510
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
With an indenoindene core, a new thieno[3,4-b] thiophene-based small-molecule electron acceptor, 2,2'-((2Z, 2'Z)-((6,6'-(5,5,10,10-tetrakis(2-ethylhexyl)- 5,10-dihydroindeno[2,1-a] indene-2,7-diyl) bis(2-octylthieno[3,4-b] thiophene-6,4-diyl)) bis(methanylylidene)) bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene)) dimalononitrile (NITI), is successfully designed and synthesized. Compared with 12-pi-electron fluorene, a carbon-bridged biphenylene with an axial symmetry, indenoindene, a carbon-bridged E-stilbene with a centrosymmetry, shows elongated p-conjugation with 14 p-electrons and one more sp(3) carbon bridge, which may increase the tunability of electronic structure and film morphology. Despite its twisted molecular framework, NITI shows a low optical bandgap of 1.49 eV in thin film and a high molar extinction coefficient of 1.90 x 10(5) m(-1) cm(-1) in solution. By matching NITI with a large-bandgap polymer donor, an extraordinary power conversion efficiency of 12.74% is achieved, which is among the best performance so far reported for fullerene-free organic photovoltaics and is inspiring for the design of new electron acceptors.
引用
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页数:6
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