Effect of substrate on NO2-sensing properties of WO3 thin film gas sensors

被引:99
作者
Lee, DS [1 ]
Nam, KH [1 ]
Lee, DD [1 ]
机构
[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea
关键词
evaporation; nitrogen dioxide adsorption; tungsten oxide; gas sensor;
D O I
10.1016/S0040-6090(00)01261-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A WO3 thin film with a 1.2 mum thickness was deposited onto several substrates, including unpolished alumina, polished alumina, and silicon, using a thermal evaporating method with Pt meander electrodes and a heater. The WO3 thin films were annealed at 600 degreesC in air for 2 h, thereafter, the microstructure and NO2-sensing properties of the thin films grown on the different substrates were investigated. The WO3 thin film on the unpolished alumina exhibited the highest sensitivity of 10-70 ppm NO2 at an operating temperature of 300 degreesC, whereas the film on the silicon substrate showed the lowest sensitivity of 3 ppm. The crystal structures of the thin films gown on the various substrates were nearly the same, however, their surface roughnesses were very different according to the kind of substrate. The sensitivity of WO3 to NO2 is highly dependent on the roughness of the substrate since this is also the main cause of modifications to the surface morphology of the sensing film. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:142 / 146
页数:5
相关论文
共 13 条
[1]   TUNGSTEN OXIDE-BASED SEMICONDUCTOR SENSOR HIGHLY SENSITIVE TO NO AND NO2 [J].
AKIYAMA, M ;
TAMAKI, J ;
MIURA, N ;
YAMAZOE, N .
CHEMISTRY LETTERS, 1991, (09) :1611-1614
[2]  
AKIYAMA M, 1993, SENSOR ACTUAT B-CHEM, V13, P619
[3]   NO2 sensitivity of WO3 thin film obtained by high vacuum thermal evaporation [J].
Cantalini, C ;
Sun, HT ;
Faccio, M ;
Pelino, M ;
Santucci, S ;
Lozzi, L ;
Passacantando, M .
SENSORS AND ACTUATORS B-CHEMICAL, 1996, 31 (1-2) :81-87
[4]  
Cullity BD, 1978, ELEMENTS XRAY DIFFRA
[5]  
KOROLKOFF NO, 1989, SOLID STATE TECHNOL, V32, P49
[6]   Nitrogen oxides-sensing characteristics of WO3-based nanocrystalline thick film gas sensor [J].
Lee, DS ;
Han, SD ;
Huh, JS ;
Lee, DD .
SENSORS AND ACTUATORS B-CHEMICAL, 1999, 60 (01) :57-63
[7]  
LEE DS, 1999, 10 INT C SOL STAT SE, V7, P1028
[8]  
Moulder J.F., 1995, HDB XRAY PHOTOELECTR
[9]   NOx gas sensing characteristics of WO3 thin films activated by noble metals (Pd, Pt, Au) layers [J].
Penza, M ;
Martucci, C ;
Cassano, G .
SENSORS AND ACTUATORS B-CHEMICAL, 1998, 50 (01) :52-59
[10]   WO3 SPUTTERED THIN-FILMS FOR NOX MONITORING [J].
SBERVEGLIERI, G ;
DEPERO, L ;
GROPPELLI, S ;
NELLI, P .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :89-92