Improved high-Q microwave dielectric resonator using ZnO and WO3-doped Zr0.8Sn0.2TiO4 ceramics

被引：40

作者：

Huang, CL ^{[1
]}

Hsu, CS ^{[1
]}

Lin, RJ ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

MATERIALS RESEARCH BULLETIN | 2001年 / 36卷 / 11期

关键词：

ceramics; oxides; X-ray diffraction; dielectric properties;

D O I：

10.1016/S0025-5408(01)00677-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of WO3 addition on the microstructures and the microwave dielectric properties of Zr0.8Sn0.2TiO4 ceramics have been investigated. It is found that low-level doping of ZnO (1 wt%) and WO3 (UP to I wt%) can significantly improve the density and dielectric properties of Zr0.8Sn0.2TiO4 ceramics. Zr0.8Sn0.2TiO4 ceramics with additives could be sintered to a theoretical density higher than 98% at 1340 degreesC. Second phases were not observed at the level of 0.25-1 wt% WO3 addition. The dielectric constant (epsilon (r)) and the temperature coefficient of resonant frequency (tau (f)) were not significantly affected, while the unloaded quality factors Q were effectively promoted by WO3 addition. An epsilon (r) value of 37.8, Q(.)f value of 61,000 (at 7 GHz), and tau (f) value of -3.9 ppm/degreesC were obtained for 1 wt% ZnO-doped Zr0.8Sn0.2TiO4 ceramics with 0.25 Wt% WO3 addition sintered at 1340 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1985 / 1993

页数：9

共 14 条

[1] EFFECT OF SN SUBSTITUTION ON CATION ORDERING IN (ZR1-XSNX)TIO4 MICROWAVE DIELECTRIC CERAMICS [J].