Spin splitting of single 0D impurity states in semiconductor heterostructure quantum wells

被引：61

作者：

Deshpande, MR

Sleight, JW

Reed, MA

Wheeler, RG

Matyi, RJ

机构：

[1] YALE UNIV,DEPT APPL PHYS,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

[3] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.76.1328

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Zeeman splitting of the ground state of single impurities in the quantum well of a resonant tunneling heterostructure is reported. We determine the absolute magnitude of the effective magnetic spin splitting factor g(perpendicular to)* for a single impurity in a 44 Angstrom Al0.27Ga0.73As/GaAs/Al0.27Ga0.73As quantum well to be 0.28 +/- 0.02. This system also allows for independent measurement of the electron tunneling rates through the two potential barriers and estimation of the occupation probability of the impurity state in the quantum well.

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页码：1328 / 1331

页数：4

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